| PART |
Description |
Maker |
| V437464S24V V437464S24VXTG-10PC V437464S24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V437464E24V V437464E24VXTG-10PC V437464E24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.3400 × 72高性能无缓冲ECC内存模块
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
|
| V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
| AT45DB642D-CU AT45DB642D09 AT45DB642D-CNU-SL954 AT |
64M X 1 FLASH 2.7V PROM, DSO8 6 X 8 MM, 1 MM HEIGHT, 1.27 MM PITCH, GREEN, CASON-8
64-megabit 2.7-volt Dual-interface DataFlash
|
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
|
| AT80C51RD2-SLRUM AT80C51RD2-RLRUM |
IC MCU 80C51 HI PERFORM 44PLCC 8-BIT, 40 MHz, MICROCONTROLLER, PQCC44
80C51 High Performance ROM 8-bit Microcontroller
|
Atmel, Corp.
ATMEL Corporation
|
| IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| RT9266 RT9266CE |
Tiny Package, High Efficiency, Step-up DC/DC Converter
Input Volt. Range(V) = 1~6.5 ;; Output Volt. Range(V) = Adjustable ;;
|
RICHTEK
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
|
